Semiconductor laser device
文献类型:专利
作者 | NANBARA SEIJI |
发表日期 | 1991-08-22 |
专利号 | JP1991192783A |
著作权人 | MITSUBISHI ELECTRIC CORP |
国家 | 日本 |
文献子类 | 发明申请 |
其他题名 | Semiconductor laser device |
英文摘要 | PURPOSE:To obtain a required monitor light which is small in dispersion by a method wherein an optical variable attenuator is installed between the rear end face of a semiconductor laser and a photodiode. CONSTITUTION:A monitor light 8 radiated from the rear of an LD 4 is so controlled through a variable attenuating plate 7 provided between the rear of the Ld 4 and a PD 5 that a required volume of the monitor light 8 is made to irradiate the PD 5. Next, the monitor light concerted is converted into a monitor current through the PD 5, which is kept constant through an automatic power control circuit (APC) to keep a front laser ray 6 constant in optical output. By this setup, as a variable attenuating plate which is able to adjust a monitor light in intensity is installed between an LD monitoring side and a PD, a monitor light can be small in dispersion and a required monitor light can be obtained. |
公开日期 | 1991-08-22 |
申请日期 | 1989-12-21 |
状态 | 失效 |
源URL | [http://ir.opt.ac.cn/handle/181661/69081] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | MITSUBISHI ELECTRIC CORP |
推荐引用方式 GB/T 7714 | NANBARA SEIJI. Semiconductor laser device. JP1991192783A. 1991-08-22. |
入库方式: OAI收割
来源:西安光学精密机械研究所
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