半導体レーザ装置
文献类型：专利
| 作者 | 中西 秀行; 浜田 健; 上田 大介; ▲吉▼川 昭男; 清水 裕一 |
| 发表日期 | 1999-02-26 |
| 专利号 | JP2892812B2 |
| 著作权人 | 松下電子工業株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レーザ装置 |
| 英文摘要 | PURPOSE:To simplify the alignment in the direction of emission of a laser beam by forming a V-shaped or trapezoidal trench, where the inclines on both sides ad consist of (111) faces, on the silicon substrate of (100) face, which has a specified OR angle with direction as an axis. CONSTITUTION:A V-shaped trench (V trench) 11, where the inclines on both sides consist of (111) faces, are formed on the silicon substrate 10 of (100), which has an OR angle of about 9 deg. with direction as a rotation axis, and between these inclines, the face on the side, where the inclination theta to the surface of the silicon substrate 10 is near to 45 deg., is made a reflecting mirror face 12, a laser chip 13 is fixed to the surface of the silicon substrate 10 so that the front end face of the semiconductor laser chip 13 may be parallel with the upper edge of the face opposed to this face. Nearly half the laser beams emitted parallel from the laser chip 13 are reflected with a reflecting mirror as shown by a light path 15, and advance vertically or nearly vertically, and are taken out as output beams. What is more, the apex of the V trench may be flattened to make it into a trapezoidal groove. Moreover, as the surface of the silicon substrate, the one of (100) face, which has an OR angle of 5-15 deg., will do. |
| 公开日期 | 1999-05-17 |
| 申请日期 | 1990-10-19 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/69117]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 松下電子工業株式会社 |
| 推荐引用方式 GB/T 7714 | 中西 秀行,浜田 健,上田 大介,等. 半導体レーザ装置. JP2892812B2. 1999-02-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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