半導体レーザ装置
文献类型:专利
作者 | 中西 秀行; ▲吉▼川 昭男; 浜田 健; 清水 裕一 |
发表日期 | 1999-02-26 |
专利号 | JP2892820B2 |
著作权人 | 松下電子工業株式会社 |
国家 | 日本 |
文献子类 | 授权发明 |
其他题名 | 半導体レーザ装置 |
英文摘要 | PURPOSE:To facilitate alignment in the direction of light emitting by forming a V-shaped groove having each different specific surface on both slanting surfaces on a specific surface of a silicon substrate, lowering one groove ridge line where a laser chip is fixed, and using the other groove slanting surface as a reflection surface. CONSTITUTION:There is formed a V-shaped groove 11 whose both slanting surfaces are (111) sides on a silicon substrate 10 of (100) sides. The side which is near the inclination 45 deg. to the surface of the substrate 10 is set as a mirror plane 12. A main plane 33 which faces this plane is lowered than a main plane 32 on the opposite side. A laser chip 13 is fixed on the plane 33 in such a manner that a light emitting section is positioned in the lower side. The light emitted from the laser chip 13 is reflected on the mirror 12 and emitted as output light at an optical pass. This construction makes it possible to mount a signal detection photodiode or a laser output detection photodiode on the substrate 10 and hence enhance alignment accuracy. |
公开日期 | 1999-05-17 |
申请日期 | 1990-11-26 |
状态 | 失效 |
源URL | [http://ir.opt.ac.cn/handle/181661/69122] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | 松下電子工業株式会社 |
推荐引用方式 GB/T 7714 | 中西 秀行,▲吉▼川 昭男,浜田 健,等. 半導体レーザ装置. JP2892820B2. 1999-02-26. |
入库方式: OAI收割
来源:西安光学精密机械研究所
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