Semiconductor laser device
文献类型:专利
作者 | NAKANISHI HIDEYUKI; YOSHIKAWA AKIO; SHIMIZU YUICHI |
发表日期 | 1992-12-04 |
专利号 | JP1992349687A |
著作权人 | 松下電子工業株式会社 |
国家 | 日本 |
文献子类 | 发明申请 |
其他题名 | Semiconductor laser device |
英文摘要 | PURPOSE:To provide a semiconductor laser device used for optical information processing, optometry, optical communication, etc. CONSTITUTION:A main face of a semiconductor substrate 10 is stepped via a bevel 3, and the bottom face 7 of a step carries a semiconductor chip Distance L from the boundary between the step bevel 3 and the bottom face 7 to an end face of the semiconductor laser chip 1, step height D, chip thickness T, height H from the bottom face 7 of the step to a laser light emission point, bevel inclination theta, and spread angle A of a beam free of necessary stray light satisfy a predetermined relational expression, so that only regular reflected light 5 is radiated within a beam angle A requested of a semiconductor laser device. |
公开日期 | 1992-12-04 |
申请日期 | 1991-05-28 |
状态 | 失效 |
源URL | [http://ir.opt.ac.cn/handle/181661/69145] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | 松下電子工業株式会社 |
推荐引用方式 GB/T 7714 | NAKANISHI HIDEYUKI,YOSHIKAWA AKIO,SHIMIZU YUICHI. Semiconductor laser device. JP1992349687A. 1992-12-04. |
入库方式: OAI收割
来源:西安光学精密机械研究所
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