Light emitting device
文献类型：专利
| 作者 | HAN, DAE SEOB; MOON, YONG TAE; SHIM, JONG-IN |
| 发表日期 | 2016-12-21 |
| 专利号 | EP2535952A3 |
| 著作权人 | LG INNOTEK CO., LTD. |
| 国家 | 欧洲专利局 |
| 文献子类 | 发明申请 |
| 其他题名 | Light emitting device |
| 英文摘要 | Disclosed is a light emitting device including a first conductive type semiconductor layer; a second conductive type semiconductor layer disposed on the first conductive type semiconductor layer; and an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer, the active layer comprising quantum well layers and quantum barrier layers, wherein each of the quantum well barrier layers comprises first barrier layers and a second barrier layer disposed between the first barrier layers, and an energy bandgaps of the second barrier layer is larger than energy bandgaps of the quantum well layers and smaller than energy bandgaps of the first barrier layers. |
| 公开日期 | 2016-12-21 |
| 申请日期 | 2012-02-22 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/70126]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | LG INNOTEK CO., LTD. |
| 推荐引用方式 GB/T 7714 | HAN, DAE SEOB,MOON, YONG TAE,SHIM, JONG-IN. Light emitting device. EP2535952A3. 2016-12-21. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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