Semiconductor luminous device
文献类型：专利
| 作者 | NISHI HIROSHI; OOSAKA SHIGEO; SUDOU HISAO; TAKUSAGAWA KIMITO |
| 发表日期 | 1979-04-25 |
| 专利号 | JP1979052484A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor luminous device |
| 英文摘要 | PURPOSE:To improve the linearity of the characteristic of a current to a photo output, by constituting stripes so that the variation in gain distribution will be generated at a prescribed position inside a luminous region. CONSTITUTION:On n-type GsAsl, n-type Ga1-xAlxAs2, p-type Ga1-yAlyAs3, p-type Ga1-xAlxAs4, and p-type GaAs5 are stacked, and S is selectively diffused into the stripe region of width W to form n-type conversion regions 6 to 8, thereby obtaining current stopping regions. In this way, more than two injection current paths for causing luminescence are formed so that the variation in gain distribution will be at a fixed position, and the oscillation with the transverse mode made stable is caused in order to make it possible to maintain linearly the relation of a current to a photo output over the broad current range. Consequently, the deterioration of a photo output waveform and the decrease of the coupling efficiency with optical fiber can be eliminated. |
| 公开日期 | 1979-04-25 |
| 申请日期 | 1977-09-22 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/70405]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | NISHI HIROSHI,OOSAKA SHIGEO,SUDOU HISAO,et al. Semiconductor luminous device. JP1979052484A. 1979-04-25. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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