Semiconductor laser device
文献类型：专利
| 作者 | KANEDA TETSUYA; NAWATA KIYOSHI |
| 发表日期 | 1980-07-19 |
| 专利号 | JP1980095389A |
| 著作权人 | NIPPON TELEGRAPH & TELEPHONE |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To increase the laser beam gain ratio at the pulse-modulated signal ON/OFF time, by coupling an external resonator constructed of a reflection mirror and having a length of light path half an integer multiple of the single mode laser beam wavelength, to the laser beam emitting surface of a semiconductor laser. CONSTITUTION:External resonator 6, having metal evaporated film 9 via lens 4 and consisting of reflection mirror 5, is coupled to emitting surface 2b of double heterojunction type semiconductor laser 3, in which stripe-shaped laser beam emitting surfaces 2a and 2b are formed on its opposing sides 1a and 1b. In this structure, semicircular cylindrical surface 7a is provided on the side of laser 3 of rasonator 6, and flat surface 7b on the opposite side. The laser beam from emitting surface 2b is passed through glass 8 constituting lens 4 and is made parallel to the axis of beam. further, the length of the beam path between emitting surface 2b and reflection mirror 5 is set at half an integer multiple of the wavelength lambda0 at the maximum gain mode, namely, lambda0XN/2 (where N=1, 2,.). By this, it is possible to get a single mode laser beam of wavelength lambda0 from emitting surface 2a. |
| 公开日期 | 1980-07-19 |
| 申请日期 | 1979-01-16 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/70411]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON TELEGRAPH & TELEPHONE |
| 推荐引用方式 GB/T 7714 | KANEDA TETSUYA,NAWATA KIYOSHI. Semiconductor laser device. JP1980095389A. 1980-07-19. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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