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文献类型：专利
| 作者 | YUASA TSUNAO |
| 发表日期 | 1987-08-14 |
| 专利号 | JP1987037828B2 |
| 著作权人 | NIPPON ELECTRIC CO |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | - |
| 英文摘要 | PURPOSE:To obtain a transparent protecting-film with decreased dangling bond by a method wherein the protecting-film of II-VI groupe compound semiconductor, which is larger than active materials constituting a semiconductor laser in respect of band interval, is formed on a reflecting surface of the semiconductor laser. CONSTITUTION:A Cr-Pt-Au electrode 2 is formed on a p-type side surface of a laser crystal and an Au-Ge-Ni electrode 3 is formed on a an-type side surface. II-VI group semiconductor powder 7 is fed to a boat 6 made of tantalum or molybdenum from a stainless container 5 of conical form little by little, being allowed to instantaneously evaporate. Thus a protecting film of II-VI group compound semiconductor can be formed on a reflecting surface of a semiconductor laser without incurring composition alteration. |
| 公开日期 | 1987-08-14 |
| 申请日期 | 1979-04-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/70413]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON ELECTRIC CO |
| 推荐引用方式 GB/T 7714 | YUASA TSUNAO. -. JP1987037828B2. 1987-08-14. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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