Semiconductor laser device
文献类型：专利
| 作者 | TANAKA, TOSHIO; NAMIZAKI, HIROFUMI; TAKAMIYA, SABURO; SUSAKI, WATARU |
| 发表日期 | 1981-07-07 |
| 专利号 | US4277759 |
| 著作权人 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | A first N-AlGaAs and a second N-GaAs layer are successively grown on an I-GaAs substrate. A third N-AlGaAs, a fourth P-AlGaAs and a fifth N-GaAs layer superpose one another on the second layer except for one lateral portion. Those portions of the five layers remote from the exposed second layer portion are changed into a P+ type and surrounded by a P zone. A positive and a negative electrode are located on the fifth layer and the exposed second layer portion respectively. The negative electrode is nearest to a laser region located in the second layer and can be secured to a heat sink. |
| 公开日期 | 1981-07-07 |
| 申请日期 | 1979-05-17 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/70414]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | TANAKA, TOSHIO,NAMIZAKI, HIROFUMI,TAKAMIYA, SABURO,et al. Semiconductor laser device. US4277759. 1981-07-07. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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