Semiconductor laser device
文献类型：专利
| 作者 | NITSUTA SHIGEYUKI; MATSUI KAZUTO |
| 发表日期 | 1981-08-08 |
| 专利号 | JP1981098890A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To obtain laser beam with less noise caused by the reflection within the package, by adhering the solder flux to the part against which the back laser beam strikes and oxidizing the part to the brown or black color. CONSTITUTION:The solder flux 4b is adhered to the surface 11 of the lower electrode 3, and on this the heat radiating body 2 is fixed. The dimension on which the solder flux is adhered is larger than that of the fixed heat radiating body 2. The surface of the solder flux 4 is oxidized by acids so that the color turns brown or black and the reflection by the back laser beam may become less. The heat radiating body 2 is surrounded by the cylindrical insulating body 5 and the reverse side 10 of the chip 1 is adhered to the side of the heat radiating body 2, with these covered with the cylinder-shaped upper electrode 6. The surface 9 of the chip 1 is connected to the electrode 6 using the fine metal wire 7 and the sheet glass 8 is fitted to the electrode 6. Thus the back beam is absorbd on the surface of the solder flux 4b resulting in less noise. |
| 公开日期 | 1981-08-08 |
| 申请日期 | 1980-01-08 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/70419]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | NITSUTA SHIGEYUKI,MATSUI KAZUTO. Semiconductor laser device. JP1981098890A. 1981-08-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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