Semiconductor laser device
文献类型：专利
| 作者 | ITOU RIYOUICHI |
| 发表日期 | 1980-10-01 |
| 专利号 | JP1980127090A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To provide a semiconductor device which serves as a light source for an information processing unit, wherein the fluctuation of the laser output from the semicondutor device due to a temperature change thereof is eliminated to maintain a constant level of the light output thereby to permit the reduction of size of the information processing unit. CONSTITUTION:Semiconductor laser element 1 is adapted to emit laser beam in both directions. One 3 of the two laser beams is used as the light for an information processing unit, while the other 4 is received by a light receiver. The amount of light received by the light receiver is detected as at 5 and the light output from the laser element 1 is controlled to compensate for the fluctuation of the received light, at at 7. The detector 5 is electrically insulated from a heat sink 8 by a thin insulating layer 9, and is mounted on the heat sink 8. The temperature of the activated layer 2 of the laser element 1 is determined by the electrical input to the element 1, ambinet temperature and the electric current supplied to a thermoelectric cooling element 12. In consequence, the level of the light output from the laser element is maintianed constant to permit the size of the information processing unit to be reduced. |
| 公开日期 | 1980-10-01 |
| 申请日期 | 1980-01-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/70421]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | ITOU RIYOUICHI. Semiconductor laser device. JP1980127090A. 1980-10-01. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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