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文献类型：专利
| 作者 | INOE TADAAKI; TOMITA KOJI |
| 发表日期 | 1987-09-22 |
| 专利号 | JP1987044834B2 |
| 著作权人 | SHARP KK |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | - |
| 英文摘要 | PURPOSE:To prevent the generation of leakage at an end surface in a die bonding process by forming a P-N junction section functioning as a light emitting region at a position lower than the positions of other P-N junctions. CONSTITUTION:A hole 2 is shaped to an N or i type GaAs substrate P type GaAlAs is grown on the hole as a semiconductor growth layer 3 serving as a carrier confirming layer, and P type GaAlAs is grown as a semiconductor growth layer 4 functioning as an active layer. N type GaAlAs is grown as a semiconductor growth layer 5 serving as a carrier confining layer. Etching is conducted from the substrate 1 back side, and etching is suspended under a condition that the layer 3 serving as the bottom of a concave section is exposed. The substrate 1 is left in regions except the bottom of the concave section at that time. A P layer 7 is shaped to the layer 3 of a window section. Accordingly, the lowering of yield due to leakage at the end surface in the die bonding process is largely improved because the P-N junction at a position where an LED chip is scribe-broken is formed at a position higher than the back of the substrate |
| 公开日期 | 1987-09-22 |
| 申请日期 | 1981-02-12 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/70433]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KK |
| 推荐引用方式 GB/T 7714 | INOE TADAAKI,TOMITA KOJI. -. JP1987044834B2. 1987-09-22. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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