Semiconductor laser device
文献类型：专利
| 作者 | SAKAMOTO TATSUJI; SHIMAOKA MAKOTO; SASAYAMA ATSUSHI; HIOKI SUSUMU |
| 发表日期 | 1982-11-16 |
| 专利号 | JP1982186383A |
| 著作权人 | HITACHI SEISAKUSHO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To detect the temperature change of a laser diode element with high sensitivity by forming a P type or N type diffusion resistor and a wiring pattern for outside extraction to one part of a sub-substrate on which the laser diode element is fixed. CONSTITUTION:An N type or P type diffusion resistor 11 is shaped at a position in the vicinity of the laser diode element 1 on the surface of the Si sub-substrate 2 on which the element 1 is fixed, and the wiring pattern 12 for outside extraction is formed from the both ends. A bonding pad 13 is attached to the nose of the pattern 12, connected to an electrode terminal 5 by a wire 6 from the nose and connected to a Peltier element temperature regulating circuit. Accordingly, the temperature change of the element can be grasped with high sensitivity by utilizing the temperature change of the resistance value of the resistor 11, and stable laser oscillation can be ensured. |
| 公开日期 | 1982-11-16 |
| 申请日期 | 1981-05-13 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/70441]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI SEISAKUSHO KK |
| 推荐引用方式 GB/T 7714 | SAKAMOTO TATSUJI,SHIMAOKA MAKOTO,SASAYAMA ATSUSHI,et al. Semiconductor laser device. JP1982186383A. 1982-11-16. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。