Semiconductor laser device
文献类型：专利
| 作者 | TAKAHASHI TAKEO; TOZAWA MASATO |
| 发表日期 | 1982-11-19 |
| 专利号 | JP1982188894A |
| 著作权人 | HITACHI SEISAKUSHO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser device with a laser diode whose temperature is accurate and constant and free from fluctuation depending on the passage of time by a construction wherein a transistor for temperature detection is incorporated into a chip of the laser diode. CONSTITUTION:A superior heat conductive insulating plate 19 is used to insulate a laser diode element 17 from a Peltier element 18. As the voltage between te base and emitter, when a constant current is made to flow into a transistor 20 formed within the element 17, changes with the temperature of the element (absolute temperature), the signal is detected by a detector 21 to control the voltage value applied to the Peltier element 18 by a Peltier element controller 22 so as to keep the temperature of the element 17 constant. By the detection of the temperature in the LD cavity, together by the use of the Peltier element as a temperature control medium, the LD may be operated always at a constant temperature. |
| 公开日期 | 1982-11-19 |
| 申请日期 | 1981-05-18 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/70442]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI SEISAKUSHO KK |
| 推荐引用方式 GB/T 7714 | TAKAHASHI TAKEO,TOZAWA MASATO. Semiconductor laser device. JP1982188894A. 1982-11-19. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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