Semiconductor element
文献类型：专利
| 作者 | IWANE GANZOU; FUKUDA MITSUO; TAKAHEI KENICHIROU; ADACHI SADAO |
| 发表日期 | 1983-03-09 |
| 专利号 | JP1983040879A |
| 著作权人 | NIPPON DENSHIN DENWA KOSHA |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor element |
| 英文摘要 | PURPOSE:To obstruct the intrusion of Au into a semiconductor, and to prevent the degradation of a light-emitting device by positioning AuIn2 between welding solder to a heat sink and an ohmic electrode. CONSTITUTION:The ohmic electrode 7 of the light-emitting device is formed, a constant-ratio intermetallic compound AuIn2 13 (53.8wt% In, 544 deg.C melting point) is attached through a sputtering method, and an Au plated layer 8 is stacked. Accordingly, the excessive section of the Au 8 or the welding solder In does not pass through the AuIn2 layer 13 at 300 deg.C or lower, the Au-Zn electrode 7 and an InGaAsP electrode forming layer 5 are not affected adversely, and a defect is not induced in InGaAsP 3, and the degradation of radiant power output is prevented. |
| 公开日期 | 1983-03-09 |
| 申请日期 | 1981-09-04 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/70451]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON DENSHIN DENWA KOSHA |
| 推荐引用方式 GB/T 7714 | IWANE GANZOU,FUKUDA MITSUO,TAKAHEI KENICHIROU,et al. Semiconductor element. JP1983040879A. 1983-03-09. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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