Semiconductor laser device
文献类型：专利
| 作者 | NAGAI SEIICHI; KAKIMOTO SHIYOUICHI; SOGOU TOSHIO; TAKAMIYA SABUROU; NITSUTA SHIGEYUKI |
| 发表日期 | 1983-03-11 |
| 专利号 | JP1983042286A |
| 著作权人 | MITSUBISHI DENKI KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To increase the heat-radiation effect as well as to contrive improvement in reliability of the titled device by a method wherein a laser diode element is attached to a supporting member through the intermediary of a material for relieving thermal stress, with relaxes the thermal stress affecting on said element, and the supporting memver is fixed to the base. CONSTITUTION:A laser diode 12 is fixed on the flat surface 2 of the supporting member of excellent heat conduction consisting of the cylindrical member with a partially vertical flat surface 2 through the intermediary of a thermal stress relaxation member 1 The supporting member 1, whereon the laser diode was adhered, a fixed in such a manner that its lower surface is inserted in the concavity 7 provided on the base 5, an electrode is connected to conductor 9 and 10, and sealed using a cap 16. As a result, the heat radiation is excellently performed without having thermal stress and the positional accuracy of the laser diode can be increased. |
| 公开日期 | 1983-03-11 |
| 申请日期 | 1981-09-07 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/70452]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI DENKI KK |
| 推荐引用方式 GB/T 7714 | NAGAI SEIICHI,KAKIMOTO SHIYOUICHI,SOGOU TOSHIO,et al. Semiconductor laser device. JP1983042286A. 1983-03-11. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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