Semiconductor laser
文献类型：专利
| 作者 | YUASA TSUNAO |
| 发表日期 | 1983-04-28 |
| 专利号 | JP1983071680A |
| 著作权人 | NIPPON DENKI KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To obtain a light emitting element such as a semiconductor laser which prevents the leakage of a current out of an active layer and which is simultaneously provided laterally with refractive index difference by forming the same material as a double hetero junction material between a high resistance cadmium sulfide and the active layer. CONSTITUTION:Since a P type InP layer 11 is thin, its resistance value is large, and a sulfided cadmium 12 has very large resistance value. A defect due to a P-N junction is formed between the layers 11 and an N type InP layer 8. A current which flows to a buried layer can be ignored to the current which flows to an active layer. An InP layer 11 is directly contacted with the side surface of the active layer 9, and a cadmium sulfide 12 is covered. Accordingly, the effective refractive index at the side of the active layer is determined by the values of the refractive index of the InP and the sulfided cadmium, and the way of permeating the light to the layers 11, 12. The refractive index becomes larger value than that of the case that the layer 12 is bonded directly to the active layer side. Thus, the lateral width of the layer 9 can be wide, the manufacture in the element can be facilitated, and the power can be largely produced. |
| 公开日期 | 1983-04-28 |
| 申请日期 | 1981-10-23 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/70455]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON DENKI KK |
| 推荐引用方式 GB/T 7714 | YUASA TSUNAO. Semiconductor laser. JP1983071680A. 1983-04-28. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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