Semiconductor light emitting device
文献类型：专利
| 作者 | OOSAKA SHIGEO; FUJIWARA KANJI |
| 发表日期 | 1983-04-28 |
| 专利号 | JP1983071683A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light emitting device |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser device having short resonator length by forming a semiconductor laser and a semiconductor layer which has the same layer structure as the laser, which is isolated at the prescribed interval and is not operated as an element. CONSTITUTION:A semiconductor laser 2 and a semiconductor layer 3 which is simultaneously formed as the laser 2 and which has the same layer structure as the laser are formed on a gold electrode layer 1 at the prescribed interval 6. Electrode metal layers 4, 5 are respectively formed on the laser 2 and the layer 3, but wirings 7 are bonded only on the layer 4 on the laser. The shoulder 8 of the layer 3 is provided to eliminate the return of the light emitted from the laser 2 reflected to the laser side. When a gallium arsenide substrate is used, the thickness of the substrate is 40mum, and the semiconductor laser having 30mum of resonator length can be realized. |
| 公开日期 | 1983-04-28 |
| 申请日期 | 1981-10-23 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/70456]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | OOSAKA SHIGEO,FUJIWARA KANJI. Semiconductor light emitting device. JP1983071683A. 1983-04-28. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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