Semiconductor laser
文献类型：专利
| 作者 | SATOU NOBU; KAJIMURA TAKASHI; CHIBA KATSUAKI |
| 发表日期 | 1983-06-13 |
| 专利号 | JP1983098994A |
| 著作权人 | HITACHI SEISAKUSHO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To enhance the yield of a chip by disposing a bonding member on the outside of a region corresponding to an expanding angle from the light emitting region of a semiconductor laser element to the opposite surface. CONSTITUTION:In a semiconductor laser chip 1, when a wire bonding 4 is performed on the surface 3 in the vicinity of an active layer 3, it is designed as follows by considering the heat sink of the quantity of generated heat in the vicinity of the layer 2 and the influence of the bonding stress to the layer 2. d1 >lcottheta, dw=2W, d2 30-50mum, d3 >ltan45 deg.=1, where 1 represents the thickness of the chip, W=wire strain, in (111) plane of (100) crystal, theta=54 deg. (slip angle). |
| 公开日期 | 1983-06-13 |
| 申请日期 | 1981-12-09 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/70460]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI SEISAKUSHO KK |
| 推荐引用方式 GB/T 7714 | SATOU NOBU,KAJIMURA TAKASHI,CHIBA KATSUAKI. Semiconductor laser. JP1983098994A. 1983-06-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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