Photosemiconductor device
文献类型：专利
| 作者 | MIKI SHINICHI; NAKAJIMA MASATO |
| 发表日期 | 1983-06-13 |
| 专利号 | JP1983098995A |
| 著作权人 | NIPPON DENKI KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Photosemiconductor device |
| 英文摘要 | PURPOSE:To inexpensively obtain high dimensional accuracy of a photosemiconductor device by composing a heat sink, on which a laser element is placed, integrally with a stem base having a sector-shaped projection. CONSTITUTION:A stem base 11 made of iron or its alloy is held airtightly or insulatingly via a glass 12 at the electrode leading wirings 13, and which are connected to the electrode of a laser element 16 via fine wiring 17. A heat sink 15, on which the laser element 16 is placed, is constructed integrally with the stem base 11 having a sector-shaped projection. Accordingly, it can be readily formed by pressing or cold forging, and the dimensional accuracy can also be highly formed at the heat sink 15 so that the element 16 is disposed at the center with the outer periphery of the base 11 as a reference. |
| 公开日期 | 1983-06-13 |
| 申请日期 | 1981-12-09 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/70461]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON DENKI KK |
| 推荐引用方式 GB/T 7714 | MIKI SHINICHI,NAKAJIMA MASATO. Photosemiconductor device. JP1983098995A. 1983-06-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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