Semiconductor element
文献类型：专利
| 作者 | YUASA TSUNAO |
| 发表日期 | 1983-06-20 |
| 专利号 | JP1983103189A |
| 著作权人 | NIPPON DENKI KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor element |
| 英文摘要 | PURPOSE:To increase the thermal conductivity of the entire final layers and to decrease thermal resistance, in an InGaAsP/InP heterojunction light emitting element, by making the final layers a plurality of layers, providing the composition of each layer so that the deviation of a grating constant does not degrade crystal property, and deviating the constant so that the thermal conductivity becomes large. CONSTITUTION:Heat generated in the active layer 11 in a semiconductor laser is escaped to a heat radiating body through a window 18 of SiO2. The thermal resistance becomes 75.1 deg.C/W in the case of a resonator having a length of 200mum. The thermal resistance of only an InGaAsP layer of layers 13, 14, 15 and 16 becomes 58.4 deg.C/W. When this is compared with the case, where, e.g. In0.94Ga0.06As0.29P0.71 layer with a thickness of 0.8mum is provided instead of the layers 13, 14, 15 and 16, the heat resistance only by said In0.94Ga0.06As0.29P0.7, layer is 83.3 deg.C/W. Thus the thermal resistance becomes smaller by 30%. Therefore the upper limit temperature at which continuous oscillation is possible is increased. In addition, since the basic layer of P type InGaAsP is made to be the top layer, a dislocation source, which is the cause of the degradation during the operation, is not introduced into the crystal, when Zn is diffused or Au-Zn is evaporated to form an alloy, and the long, stable operation is made possible. |
| 公开日期 | 1983-06-20 |
| 申请日期 | 1981-12-15 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/70462]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON DENKI KK |
| 推荐引用方式 GB/T 7714 | YUASA TSUNAO. Semiconductor element. JP1983103189A. 1983-06-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。