Manufacture of semiconductor laser device
文献类型：专利
| 作者 | KOBAYASHI MASAYOSHI; MORI MITSUHIRO; TSUJI SHINJI; SAITOU KATSUTOSHI; CHIBA KATSUAKI; MORI TAKAO; SATOU NOBU; KATOU HIROSHI; KOBAYASHI MASAMICHI |
| 发表日期 | 1983-06-28 |
| 专利号 | JP1983108784A |
| 著作权人 | HITACHI SEISAKUSHO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser device |
| 英文摘要 | PURPOSE:To reduce the stress imposed on the inside of a semiconductor laser element and thus obtain one available for a long time operation by a method wherein, after die bonding, the device is heated again to a temperature over the melting point of solder and applied to the treatment to cool it in a state that a compression stress is impressed on the side surface of a sub mount. CONSTITUTION:When there is a relation alphaL |
| 公开日期 | 1983-06-28 |
| 申请日期 | 1981-12-23 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/70464]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI SEISAKUSHO KK |
| 推荐引用方式 GB/T 7714 | KOBAYASHI MASAYOSHI,MORI MITSUHIRO,TSUJI SHINJI,et al. Manufacture of semiconductor laser device. JP1983108784A. 1983-06-28. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。