Semiconductor light-emitting device
文献类型：专利
| 作者 | OOTANI SHIYUNJI |
| 发表日期 | 1983-08-22 |
| 专利号 | JP1983141581A |
| 著作权人 | SUMITOMO DENKI KOGYO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light-emitting device |
| 英文摘要 | PURPOSE:To prevent the generation of a crystal defect in a semiconductor light- emitting element even when wire bonding is executed with sufficient strength by pasting a semiconductor thin piece with low resistance onto an electrode on the wire bonding side by an adhesive. CONSTITUTION:The semiconductor thin piece 20, onto both surfaces thereof electrodes 21, 22 are formed, is pasted onto the upper electrode 2 of a DH semiconductor laser chip A with a striped structure consisting of the upper electrode 2, an n-GaAs layer 3, an n-GaAlAs layer 4, an active layer 5, a p-GaAlAs layer 6, a p-GaAs layer 7, a SiO2 layer 8 and a lower electrode 9 by an adhesive 23, and a gold wire 1 as a bonding wire is wire-bonded onto the electrode 21 of the semiconductor thin piece 20. Pressure in case of wire bonding is applied partially to the semiconductor thin piece 20, but the pressure is absorbed and relaxed by the presence of the adhesive 23 between the thin piece and the semiconductor laser chip A to the chip A, and hardly has an effect on the chip. Even when a defect is generated in the semiconductor thin piece 20 by pressure in case of wire bonding, the defect does not extend to the semiconductor laser chip A by the presence of the adhesive 23, thus extremely preventing the generation of a defect in the vicinity of the active layer 5. |
| 公开日期 | 1983-08-22 |
| 申请日期 | 1982-02-17 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/70468]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SUMITOMO DENKI KOGYO KK |
| 推荐引用方式 GB/T 7714 | OOTANI SHIYUNJI. Semiconductor light-emitting device. JP1983141581A. 1983-08-22. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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