Semiconductor laser device
文献类型：专利
| 作者 | TAKAHASHI TAKEO; TOZAWA MASATO; MATSUMOTO YOSHITOSHI |
| 发表日期 | 1983-08-26 |
| 专利号 | JP1983143594A |
| 著作权人 | HITACHI SEISAKUSHO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To reduce the noise sounding without utilizing additional circuits at all making optical coupling as highly efficient as that of single mode laser by a method wherein an external resonator is provided near semiconductor laser element to fix vertial mode. CONSTITUTION:With specified voltage impressed, the laser beams 6 are emitted from the output surfaces above and below the tip 5 and the upward laser beams 6 advance outside cap 9 through wind glass 8 to irradiate audiodisc surface while the downward laser beams 6 input into light receiving element 7 to be output-monitered partly reflected by the surface returning to the laser element 5 again. The output surface of rear end of the tip 5 forms a common end of the internal resonator of tip 5 and the external resonator comprising the tip 5 and light receiving element 7 while the standing waves of internal and external resonators must be equal in frequency as well as knotty at the output surface of rear end of the tip 5. Therefore if the external resonator length is made shorter than the internal resonator length in terms of frequency, the resultant standing waves and vertical modes may be selected more easily enabling to lock the mode. |
| 公开日期 | 1983-08-26 |
| 申请日期 | 1982-02-22 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/70469]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI SEISAKUSHO KK |
| 推荐引用方式 GB/T 7714 | TAKAHASHI TAKEO,TOZAWA MASATO,MATSUMOTO YOSHITOSHI. Semiconductor laser device. JP1983143594A. 1983-08-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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