Semiconductor device
文献类型：专利
| 作者 | HATADA KENZOU; INOUE KAORU; NAKAO ICHIROU |
| 发表日期 | 1983-11-24 |
| 专利号 | JP1983201388A |
| 著作权人 | MATSUSHITA DENKI SANGYO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor device |
| 英文摘要 | PURPOSE:To eliminate the mechanical stress exerted on an element in case of adhesion while improving yield and reliability by a method wherein an electrode on one main surface of a semiconductor element is made to adhere to an external substrate making use of a low melting point metal while a flexible lead is made to adhere to an electrode on the other main surface making use of the same low melting point metal. CONSTITUTION:A semiconductor chip 1 is fixed to a heat sink 6 by means of a solder 7 through the intermediary of an electrode 4 such as Cu etc. while a lead electrode 21 such as Cu etc. is connected to another electrode 5 by means of another solder 20. The other end of the lead electrode 21 is connected to an external electrode 22 by means of the other solder 23. When the electrode 5 or the lead electrode 21 is provided with respective solder and they are slightly pressure welded and heated up to around the melting point of the solder, they may be connected to exert no excessive stress for the chip 1, resultantly improving both yield and reliability. |
| 公开日期 | 1983-11-24 |
| 申请日期 | 1982-05-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/70482]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA DENKI SANGYO KK |
| 推荐引用方式 GB/T 7714 | HATADA KENZOU,INOUE KAORU,NAKAO ICHIROU. Semiconductor device. JP1983201388A. 1983-11-24. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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