Manufacture of semiconductor laser device
文献类型：专利
| 作者 | IIDA SEIJI; KURIHARA HARUKI |
| 发表日期 | 1984-01-06 |
| 专利号 | JP1984000983A |
| 著作权人 | TOKYO SHIBAURA DENKI KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser device |
| 英文摘要 | PURPOSE:To efficiently mount an ultrafine semiconductor element by mounting the element on a heat sink which is partitioned into a pluraity of units, isolating the heat sink into respective units and manufacturing a semiconductor laser device. CONSTITUTION:The main surface 111 of a silicon substrate is partitioned into a plurality of units 13, and dicing lines 131 are formed to be readily divided. Molten metal 11 of the side on which a semiconductor laser element is mounted, is formed in a 3-layer structure. This rectangular unit is placed on a heater 16 of a die bonder, and heated in forming gas atmosphere. Then, the semiconductor laser element 1 is placed and fixed accurately on the end of the rectangular unit by a vacuum adsorbing terminal 17 thereon. Further, it is contacted with Au-tin alloy of molten state on the rectangular unit by a heating mechanism of the terminal 17. Thus, the element 1 is secured, while an electrode interconnecting post 15 is similarly secured. |
| 公开日期 | 1984-01-06 |
| 申请日期 | 1982-06-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/70487]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOKYO SHIBAURA DENKI KK |
| 推荐引用方式 GB/T 7714 | IIDA SEIJI,KURIHARA HARUKI. Manufacture of semiconductor laser device. JP1984000983A. 1984-01-06. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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