Semiconductor light emitting device
文献类型：专利
| 作者 | OOTANI SHIYUNJI |
| 发表日期 | 1984-02-07 |
| 专利号 | JP1984023576A |
| 著作权人 | SUMITOMO DENKI KOGYO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light emitting device |
| 英文摘要 | PURPOSE:To improve the life time of a semiconductor light emitting device by interposing a semiconductor layer of polycrystalline or amorphous between electrodes and the crystals of the device, thereby preventing the occurrence of defects due to mechanical strain at the time of linear junction. CONSTITUTION:Si3N4 films 50, 51 are covered on the (100) surface of an N type GaAs substrate 31, a window 52 is opened, and an SiO2 film 53 is superposed. Zn diffusion is performed by using Ga-Zn alloy in a vacuum ampule, thereby forming a p type layer 34. The films 50-53 are removed, and pad 37 of polysilicon of 0.5-1mum is formed. An SiO2 film 32 is covered, an electrode window 54 is formed, and Zn is thermally diffused by using ZnAs2 in a vacuum ampule, Au-Ti electrode 33 is then formed, Au-Ge-Ti alloy 36 is formed on the back surface, and heat treated. Since a polycrystalline or amorphous semiconductor layer 37 which is hardly cracked in a specific direction different from a single crystal is interposed between the electrode 33 for bonding the wire 35 and the substrate 31, mechanical strain at the junction time can be dispersed or uniformly alleviated, thereby preventing the producting of a defect such as grown of dislocation to the light emitting region, and effectively preventing the decrease in the lifetime of the element. |
| 公开日期 | 1984-02-07 |
| 申请日期 | 1982-07-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/70494]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SUMITOMO DENKI KOGYO KK |
| 推荐引用方式 GB/T 7714 | OOTANI SHIYUNJI. Semiconductor light emitting device. JP1984023576A. 1984-02-07. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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