Semiconductor light emitting device
文献类型：专利
| 作者 | NAMISAKI HIROBUMI; HORIUCHI SHIGEKI; OOMURA ETSUJI; SUZAKI WATARU |
| 发表日期 | 1984-02-18 |
| 专利号 | JP1984031077A |
| 著作权人 | MITSUBISHI DENKI KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light emitting device |
| 英文摘要 | PURPOSE:To enhance the efficiency of coupling to an optical fiber by a method wherein an etching hole is provided at an end surface in the axial direction of the light emitting region of a semiconductor crystal, a focusing lens is set in this hole, and thus the optical axis is made agree with the axis of the light emitting region. CONSTITUTION:The semiconductor light emitting device is formed of an N type GaAs substrate 1, an N type GaA As layer 2, an active layer 3 composed of a P or an N type GaAs, and a polycrystal layer composed of a P type GaA As layer 4, an N-side electrode 5, a P-side electrode 6a. The etching hole 9 is provided at one end surface in the direction of the stripe P-side electrode 6a of the semiconductor chip. The hole 9 has the distance from its bottom to the center of the active layer 3 made equal to the radius to the spherical lens 7, and is so set as to have an aperture for exposing a part of the spherical lens 7 on the opposite side to the light emitting region. Of the side surfaces of the hole 9, the neighborhood at least in contact with the light emitting region is an approximately rectangular surface to the axis of the light emitting region, in order that the radiation beam does not bend to a large degree. |
| 公开日期 | 1984-02-18 |
| 申请日期 | 1982-08-13 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/70496]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI DENKI KK |
| 推荐引用方式 GB/T 7714 | NAMISAKI HIROBUMI,HORIUCHI SHIGEKI,OOMURA ETSUJI,et al. Semiconductor light emitting device. JP1984031077A. 1984-02-18. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。