Manufacture of semiconductor element
文献类型：专利
| 作者 | FUKUDA HIROKAZU; SHINOHARA KOUJI; NISHIJIMA YOSHITO; YAMAMOTO KOUSAKU |
| 发表日期 | 1984-05-21 |
| 专利号 | JP1984087889A |
| 著作权人 | FUJITSU KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor element |
| 英文摘要 | PURPOSE:To prevent an In metal from diffusing inside a substrate due to pinhole of Cr by a method wherein, after forming an Au layer on a P type compound semiconductor crystal containing Pb, a non-rectified quadruple layer film of Cr- Au-Cr-Au layer is formed and a lead-out electrode is formed on the quadruple layer film through the intermediary of the In metal layer. CONSTITUTION:A P type PbTe crystal layer as a buffer layer 22 is formed on a P type PbTe substrate 2 firstly after forming a P type Pb1-xSnxTe crystal layer as an active layer 23 on the layer 22, an N type Pb1-xSnxTe crystal layer as a closing layer 24 is further formed on the layer 23 and then said crystal layers are mesa-etched down to the buffer layer 22. Secondly after forming an anode oxide film 25 on the substrate 21, a part of the film 25 is removed by etching. Then Au layers 26, 27 are formed respectively on the bottom of substrate 21 and the anode oxide film 25. Then the Au layer 27 is connected to a heatsink 28. Thirdly a Cr evaporated layer 29, an Au evaporated layer 30, a Cr evaporated layer 31, an Au evaporated layer 32 are successively laminated on an Au evaporated layer 26 formed on the bottom of the substrate 2 Finally an Au ribbon 11 is bonded through an In layer 10 to form a lead-out electrode. |
| 公开日期 | 1984-05-21 |
| 申请日期 | 1982-11-10 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/70503]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU KK |
| 推荐引用方式 GB/T 7714 | FUKUDA HIROKAZU,SHINOHARA KOUJI,NISHIJIMA YOSHITO,et al. Manufacture of semiconductor element. JP1984087889A. 1984-05-21. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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