Semiconductor laser device
文献类型：专利
| 作者 | MORIKI KAZUNORI; OOSAWA JIYUN; IKEDA KENJI; SUZAKI WATARU |
| 发表日期 | 1984-08-29 |
| 专利号 | JP1984151484A |
| 著作权人 | KOGYO GIJUTSUIN (JAPAN) |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To transmit heat generated by a semiconductor laser element efficiently over a heat sink by providing the heat sink with sections to be joined joining with at least two surfaces of a substrate constituting a semiconductor laser device. CONSTITUTION:A section to be joined 4 consisting of recessed section formed to the upper surface of a heat sink 2 in predetermined depth has a bottom 4a and three side-surfaces 4b-4d connected to the bottom 4a. The bottom of the substrate 1a of a semiconductor laser element 1 and three side surfaces except a side surface on the output end surface 1c side of a laser oscillation section 1b are joined with the bottom 4a and side surfaces 4b-4d of the section to be joined 4 by a joining material 3. Consequently, the temperature rise of the element 1 can be inhibited because the back and three side-surfaces of the element 1 are joined with the heat sink 2 and the heat sink 2 is joined up to a section in the vicinity of the oscillation section 1b. Accordingly, an output from a semiconductor laser device can be increased. |
| 公开日期 | 1984-08-29 |
| 申请日期 | 1983-02-18 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/70509]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | KOGYO GIJUTSUIN (JAPAN) |
| 推荐引用方式 GB/T 7714 | MORIKI KAZUNORI,OOSAWA JIYUN,IKEDA KENJI,et al. Semiconductor laser device. JP1984151484A. 1984-08-29. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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