Semiconductor laser element and manufacture thereof
文献类型：专利
| 作者 | SHIGENO KAZUO |
| 发表日期 | 1984-11-10 |
| 专利号 | JP1984198785A |
| 著作权人 | NIPPON DENKI KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element and manufacture thereof |
| 英文摘要 | PURPOSE:To prevent the generation of a current route on the side surface and enable to avoid the deterioration of reliability by contriving that a high resistant layer separates from an oscillation region and the depth including the side surface exceeds a P-N junction surface. CONSTITUTION:A metal serving as the mask for proton irradiation is vapor- deposited on a wave guide structure completed wafer by the combination of the processes for photoresist and liftoff, so as to remain in stripe form 61 more widely than a stripe width on the surface immediately on the stripe of the oscillation region with said stripe as the center. At this time, the distance from a proton irradiated layer 32 to the oscillation region 19 is needed at least 15mum or more. Next, the high resistant layer 32 is so formed as to reach a depth exceeding the P-N junction surface by performing proton irradiation. Thereafter, the masking metal 61 is removed, and a mounting electrode 18 is vapor-deposited. Then, the substrate is polished to a required thickness, and a bonding electrode is vapor-deposited on the back surface, thus completing the wafer. Finally, the wafer is cleft at the right angle to the oscillation region, and afterwards pellets are separated at the center of the high resistant layer 32. |
| 公开日期 | 1984-11-10 |
| 申请日期 | 1983-04-26 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/70520]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON DENKI KK |
| 推荐引用方式 GB/T 7714 | SHIGENO KAZUO. Semiconductor laser element and manufacture thereof. JP1984198785A. 1984-11-10. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。