Semiconductor laser
文献类型：专利
| 作者 | MORI MASAKAZU; MIURA SHIYOUICHI; HANAMITSU KIYOSHI |
| 发表日期 | 1985-01-05 |
| 专利号 | JP1985000791A |
| 著作权人 | FUJITSU KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To inhibit Fabry-Perot mode oscillation even in the case of a large degree of amplification by a method wherein both end surfaces are connected in ring form by means of a dielectric wave guide or a laser medium, in a distributed feedback type laser and a distributed reflection type laser. CONSTITUTION:Both the end surfaces of an active layer 5 are connected in ring form by means of the dielectric wave guide 7, resulting in the inhibition of the Fabry-Perot mode oscillation, in the distribution feedback type laser. At this time, the length of the wave guide 7 is taken larger than a coherence length. Such a manner does not allow said oscillation even in the case of the increase of the degree of amplification of the active layer 5, since both the end surfaces of the active layer 5 are constructed in ring form by means of the wave guide 7. Light is taken out by means of an optical fiber 9 from the active layer 5 via the wave guide 7 and an output coupling wave guide 8, there-fore the length from the active layer 5 is long, and then the influence of the reflection on the coupling part with the optical fiber 9 can be alleviated. |
| 公开日期 | 1985-01-05 |
| 申请日期 | 1983-06-17 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/70521]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU KK |
| 推荐引用方式 GB/T 7714 | MORI MASAKAZU,MIURA SHIYOUICHI,HANAMITSU KIYOSHI. Semiconductor laser. JP1985000791A. 1985-01-05. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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