Semiconductor laser
文献类型：专利
| 作者 | IWASAKI TAMOTSU; IKOMA TOSHIAKI; OKUMURA JITOKU |
| 发表日期 | 1985-06-04 |
| 专利号 | JP1985100489A |
| 著作权人 | FURUKAWA DENKI KOGYO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser which has a reflecting surface including a stable quality, excellent flatness and high reflectivity by forming the reflecting surface of a rosonator of a solid phase reactive product of an element for forming a compound semiconductor and a metal. CONSTITUTION:An active layer 23 of III-V Group compound semiconductor is prepared, and the reflecting surfaces 34A, 34B of a resonator are formed of a solid phase reactive product of one or more elements for forming the III-V Group compound semiconductor and a metal for producing a compound having the chemical equivalent composition upon reacting with the elements. For example, an N type GaAlAs layer 22, an N type GaAs active layer 23 and an N type GaAlAs layer 24 are sequentially crystallized and grown on an N type GaAs substrate 21, an SiO2 insulating film 25 is formed, a hole 27 is opened, Zn is diffused from the hole 27, thereby converting part of the layers 24, 23, 22 into P type layers 28, 29, 30. then, electrodes 32, 33 are formed, cut by a dicing machine, the cut surfaces are etched, Pt is bonded to the surfaces, solid phase reaction is performed at 400 deg.C, thereby forming a solid phase reactive product 34. |
| 公开日期 | 1985-06-04 |
| 申请日期 | 1983-08-02 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/70525]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FURUKAWA DENKI KOGYO KK |
| 推荐引用方式 GB/T 7714 | IWASAKI TAMOTSU,IKOMA TOSHIAKI,OKUMURA JITOKU. Semiconductor laser. JP1985100489A. 1985-06-04. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。