Semiconductor laser
文献类型:专利
作者 | KAEDE KAZUHISA |
发表日期 | 1985-04-03 |
专利号 | JP1985057690A |
著作权人 | NIPPON DENKI KK |
国家 | 日本 |
文献子类 | 发明申请 |
其他题名 | Semiconductor laser |
英文摘要 | PURPOSE:To enable to efficiently feedback light using a small angular aperture and to easily perform adjustment of a lens of the small angular aperture by a method wherein a semiconductor laser having a 2n-order rotating lattice, which draws out oscillating light in the vertical direction to the P-N junction face, and an external mirror, which makes external radiant light emitted from the lattice feedback in the laser, are provided. CONSTITUTION:A semiconductor laser 201 is fusion-welded to a heat sink 202 and is connected with a lead wire 203 and a bonding-wire 204. A slab lens 205 is mounted on the sink 202 in a one-dimensional direction. An external mirror 206 adhered on a glass plate 207, which makes oscillating light feedback gain in the laser 201, is disposed on the side of the lens 205 opposite to the laser 20 A secondary rotating lattice 208 is disposed at the laser 201 and oscillating light is drawn out in the vertical direction to the P-N junction face. As a result, feedback of light can be efficiently performed by using the slab lens 205 of a small angular aperture and adjustment of the corresponding position of the slab lens 205 and the external mirror 206 can be easily performed. |
公开日期 | 1985-04-03 |
申请日期 | 1983-09-08 |
状态 | 失效 |
源URL | [http://ir.opt.ac.cn/handle/181661/70531] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | NIPPON DENKI KK |
推荐引用方式 GB/T 7714 | KAEDE KAZUHISA. Semiconductor laser. JP1985057690A. 1985-04-03. |
入库方式: OAI收割
来源:西安光学精密机械研究所
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