中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Semiconductor laser

文献类型:专利

作者KAEDE KAZUHISA
发表日期1985-04-03
专利号JP1985057690A
著作权人NIPPON DENKI KK
国家日本
文献子类发明申请
其他题名Semiconductor laser
英文摘要PURPOSE:To enable to efficiently feedback light using a small angular aperture and to easily perform adjustment of a lens of the small angular aperture by a method wherein a semiconductor laser having a 2n-order rotating lattice, which draws out oscillating light in the vertical direction to the P-N junction face, and an external mirror, which makes external radiant light emitted from the lattice feedback in the laser, are provided. CONSTITUTION:A semiconductor laser 201 is fusion-welded to a heat sink 202 and is connected with a lead wire 203 and a bonding-wire 204. A slab lens 205 is mounted on the sink 202 in a one-dimensional direction. An external mirror 206 adhered on a glass plate 207, which makes oscillating light feedback gain in the laser 201, is disposed on the side of the lens 205 opposite to the laser 20 A secondary rotating lattice 208 is disposed at the laser 201 and oscillating light is drawn out in the vertical direction to the P-N junction face. As a result, feedback of light can be efficiently performed by using the slab lens 205 of a small angular aperture and adjustment of the corresponding position of the slab lens 205 and the external mirror 206 can be easily performed.
公开日期1985-04-03
申请日期1983-09-08
状态失效
源URL[http://ir.opt.ac.cn/handle/181661/70531]  
专题半导体激光器专利数据库
作者单位NIPPON DENKI KK
推荐引用方式
GB/T 7714
KAEDE KAZUHISA. Semiconductor laser. JP1985057690A. 1985-04-03.

入库方式: OAI收割

来源:西安光学精密机械研究所

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