Semiconductor laser
文献类型：专利
| 作者 | OOTSUKA AKIRA; IGUCHI SHINICHI; YAMAZOE YOSHIMITSU; OGASA NOBUO |
| 发表日期 | 1985-05-24 |
| 专利号 | JP1985092687A |
| 著作权人 | SUMITOMO ELECTRIC INDUSTRIES |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To improve the heat radiation of the titled device and to lessen the stress accompanied with the generation of heat by a method wherein any one of two kinds of alloys made by making Cu contain uniformly in each of W and Mo whose thermal expansion coefficients are both in a specific extent, or an alloy made by making Cu contain uniformly in an alloy of the W and the Mo, is used as a material for the submount. CONSTITUTION:As a material for the submount of a semiconductor laser, wherein a semiconductor laser element 1 formed with GaAs, Gap or GaSb as the substrate has been used, is used any one of an alloy made by making Cu contain uniformly in W whose thermal expansion coefficient is in an extent of 5.0-8.5X10cm/cm. deg.C; an alloy made by making Cu contain uniformly in Mo, whose thermal expansion coefficient is also in the above-mentioned extent as well; or an alloy made by making Cu contain uniformly in an alloy of the W and the Mo. These alloys can be manufactured by a powder method or a solution-dipping method. When the thermal expansion coefficient of the material for the submount exceeds the above-mentioned extent of thermal expansion coefficient, the mismatching of the thermal expansion coefficient of the material and that of the semiconductor laser element 1 is increased. As a result, failure of the element or lowering of the luminous efficiency, etc., are caused due to stress, which generates in the element. |
| 公开日期 | 1985-05-24 |
| 申请日期 | 1983-10-26 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/70539]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SUMITOMO ELECTRIC INDUSTRIES |
| 推荐引用方式 GB/T 7714 | OOTSUKA AKIRA,IGUCHI SHINICHI,YAMAZOE YOSHIMITSU,et al. Semiconductor laser. JP1985092687A. 1985-05-24. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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