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文献类型：专利
| 作者 | OOTSUKA AKIRA; OGASA NOBUO; IGUCHI SHINICHI; YAMAZOE YOSHIMITSU |
| 发表日期 | 1990-05-29 |
| 专利号 | JP1990024392B2 |
| 著作权人 | SUMITOMO ELECTRIC INDUSTRIES |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | - |
| 英文摘要 | PURPOSE:To improve the heat radiation of the titled device and to lessen the stress accompanied with the generation of heat by a method wherein any one of two kinds of alloys made by making Cu contain uniformly in each of W and Mo, whose thermal expansion coefficients are both in a specific extent, or an alloy made by making Cu uniformly contain in an alloy of the W and the Mo, is used as a material for the submount. CONSTITUTION:As a material for the submount of a semiconductor laser, wherein a semiconductor laser element 1 formed with InAs, InP or InSb as the substrate has been used, is used any one of an alloy made by making Cu uniformly contain in W, whose thermal expansion coefficient is in an extent of 4.5-7.5X10cm/cm. deg.C; an alloy made by making Cu uniformly contain in Mo, whose thermal expansion coefficient is also in the abovementioned extent as well; or an alloy made by making Cu contain uniformly in an alloy of the W and the Mo. These alloys can be manufactured by a powder method or a solution-dipping method. When the thermal expansion coefficient of the material for the submount exceeds the abovementioned extent of thermal expansion coefficient, the mismatching of the thermal expansion coefficient of the material and that of the semiconductor laser element 1 is increased. As a result, failure of the element or lowering of the luminous efficiency, etc., are caused due to stress, which generates in the element. In particular, in case the thermal expansion coefficient is in less than an extent of 4.5-7.5X4.5cm/cm. deg.C, the heat conductivity of the material is extremely reduced and the heat-dissipating effect cannot be fulfilled. |
| 公开日期 | 1990-05-29 |
| 申请日期 | 1983-10-26 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/70540]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SUMITOMO ELECTRIC INDUSTRIES |
| 推荐引用方式 GB/T 7714 | OOTSUKA AKIRA,OGASA NOBUO,IGUCHI SHINICHI,et al. -. JP1990024392B2. 1990-05-29. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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