Semiconductor laser device
文献类型：专利
| 作者 | ITOU RIYOUICHI |
| 发表日期 | 1984-06-29 |
| 专利号 | JP1984112678A |
| 著作权人 | HITACHI SEISAKUSHO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To obtain a monitoring light without light loss and to reduce the size and weight of a semiconductor laser device by insulating a photoreceptor of a detector from a heat sink of a support when arranging a semiconductor laser element for emitting lights in bidirections and a detector for detecting one light on the heat sink. CONSTITUTION:A thermoelectric cooling element 12 is secured to a heat sink fin 13, and a copper heat sink 8 is provided on the element through an insulating layer 11 and a metal plate 10. At this time, a part having a difference and a projecting part are formed on the surface of the sink 8, a photodetector 5 in which an insulating layer 9 is covered on the bottom and at the side of the element 1 is placed on the difference part, and a laser element 1 of GaAs-AlGaAs double hetero structure is placed on the projecting part. In this manner, the lights 3, 4 of bidirections from the active layer 2 formed in the element 1 are emitted, and the light 4 of the lights is directed toward the photodetector 5, and amplified by an amplifier 6 as a monitoring light. |
| 公开日期 | 1984-06-29 |
| 申请日期 | 1983-10-28 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/70542]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI SEISAKUSHO KK |
| 推荐引用方式 GB/T 7714 | ITOU RIYOUICHI. Semiconductor laser device. JP1984112678A. 1984-06-29. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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