Semiconductor laser device
文献类型：专利
| 作者 | ITOU RIYOUICHI |
| 发表日期 | 1984-06-29 |
| 专利号 | JP1984112677A |
| 著作权人 | HITACHI SEISAKUSHO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To produce a detecting light without light loss and to reduce the size and weight of a semiconductor laser device by arranging a photolead unit at one light emitting side of a semiconductor laser element for emitting lights in bidirections. CONSTITUTION:A thermoelectric cooling element 12 is mounted on a heat sink fin 13, and a copper heat sink 8 is secured onto the element through an insulating layer 11 and a metal plate 10. Then, when photolead units each of which has a semiconductor laser element 1 of GaAsAlGaAs double hetero structure and a photodetector 5 made of a solar battery or the like are aligned and arranged on the sink 8, a difference is formed on the surface, on which the photodetector 5 is placed, and the placing surface of the element 1 is projected. In other words, the photodetector 5 in which an insulating layer 9 is covered on the bottom and the side of the element 1 is disposed at the side of the light 4 of the laser lights 3, 4 emitted from the active layer 2 of the element 1 in bidirections, the output from there is amplified by an amplifier 6 as a detecting light. In this manner, the monitoring light can be produced without loss. |
| 公开日期 | 1984-06-29 |
| 申请日期 | 1983-10-28 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/70544]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI SEISAKUSHO KK |
| 推荐引用方式 GB/T 7714 | ITOU RIYOUICHI. Semiconductor laser device. JP1984112677A. 1984-06-29. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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