Semiconductor laser device
文献类型：专利
| 作者 | TAJIRI FUMIKO; HAMADA TAKESHI; WADA MASARU; ITOU KUNIO; KUME MASAHIRO; SHIMIZU YUUICHI |
| 发表日期 | 1985-07-15 |
| 专利号 | JP1985132382A |
| 著作权人 | MATSUSHITA DENKI SANGYO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To increase the modulation efficiency by providing a thick active layer on the vicinity of one end and a modulating electrode above the layer, and producing a depletion layer in the active layer by a signal voltage applied to the electrode. CONSTITUTION:An N type GaAlAs layer 2, an N type GaAs layer 3, a P type GaAlAs layer 4, and a P type GaAs layer 5 are sequentially grown on a substrate 1 having a stepwise difference at the end. Parts of the layers 4, 5 are removed by etching, and a silicon oxide film 6 and an aluminum electrode 8 are bonded. An ohmic electrode 7 is bonded onto the layer 5. When a positive voltage is applied to the electrode 8, a depletion layer is formed on the lower portion of an SiO2 film 6, the end extends to the lower side in the active layer as the positive voltage rises, and the refractive index increases. A light is bent toward a direction of high refractive index, and modulated. The laser light is bent by forming the electrode 8 above the layer 3 to enhance the modulation efficiency. |
| 公开日期 | 1985-07-15 |
| 申请日期 | 1983-12-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/70550]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA DENKI SANGYO KK |
| 推荐引用方式 GB/T 7714 | TAJIRI FUMIKO,HAMADA TAKESHI,WADA MASARU,et al. Semiconductor laser device. JP1985132382A. 1985-07-15. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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