Semiconductor device
文献类型：专利
| 作者 | KURIHARA YASUTOSHI; MINAGAWA TADASHI; YATSUNO KOUMEI; HIROSE KAZUHIRO; SHINOHARA KOUICHI; YASUDA TOMIROU; SAWAHATA MAMORU; KUSHIMA TADAO |
| 发表日期 | 1985-08-17 |
| 专利号 | JP1985157284A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor device |
| 英文摘要 | PURPOSE:To obtain the titled device of stable performance to be manufactured with good yield by a method wherein a section of solder adhesion in such a manner that the side surface of a semiconductor substrate is almost even with that of an intermediate member is provided on the intermediate member, and a region imparted with the wetting property to solder is provided in the neighborhood of the adhesion part of the side surface of the intermediate member. CONSTITUTION:The semiconductor laser substrate 2 is die-bonded on the intermediate member 3 with Au-Sn solder, and the main surface of the substrate 2 is provided with an electrode layer whose uppermost layer is an Au layer. Besides, the intermediate member 3 is adhered on a supporting member 1 with Pb-Sn series solder. A conduction path constituent member 5 is connected to the other conductive member from the electrode layer in the upper side of the substrate 2, and the other electrode in the lower side of the substrate 2 is connected to the other conductive member via copper relay plate 6. The intermediate member 3 has a metallized layer 33 on its side surface 31 and is imparted with the wetting property to solder. This enables the solder to flow out of the layer 33, producing no swelling at the end part because of sagging. Therefore, the cut-off of a laser light path or the short circuit of a P-N junction does not occur. |
| 公开日期 | 1985-08-17 |
| 申请日期 | 1984-01-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/70552]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | KURIHARA YASUTOSHI,MINAGAWA TADASHI,YATSUNO KOUMEI,et al. Semiconductor device. JP1985157284A. 1985-08-17. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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