Semiconductor laser
文献类型：专利
| 作者 | KAKIMOTO SHIYOUICHI; ISHII MITSUO |
| 发表日期 | 1985-09-02 |
| 专利号 | JP1985169185A |
| 著作权人 | MITSUBISHI DENKI KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To prevent the deterioration of a laser element due to thermal stress and the damage of the laser element due to excessive voltage, by attaching the laser element by using a Zener element, whose thermal expansion coefficient is close to that of the laser element, and connecting both elements in reverse parallel. CONSTITUTION:Attachment of a semiconductor laser element 10 to a heat radiating metal block 30 is performed by way of a Zener diode 11 comprising silicon, whose thermal expansion coefficient is close to that of the laser element 10. Thus the thermal stress, which is applied to the semiconductor element is alleviated. The semiconductor laser element 10 and the Zener diode 11 are connected in reverse parallel. Excessive reverse bias voltages, which are applied to the semiconductor element 10, are absorbed by the Zener diode 11 in this constitution. |
| 公开日期 | 1985-09-02 |
| 申请日期 | 1984-02-13 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/70553]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI DENKI KK |
| 推荐引用方式 GB/T 7714 | KAKIMOTO SHIYOUICHI,ISHII MITSUO. Semiconductor laser. JP1985169185A. 1985-09-02. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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