Semiconductor laser device
文献类型：专利
| 作者 | TAJIRI FUMIKO; HAMADA TAKESHI; SHIMIZU YUUICHI; KUME MASAHIRO; ITOU KUNIO; WADA MASARU |
| 发表日期 | 1985-10-05 |
| 专利号 | JP1985196992A |
| 著作权人 | MATSUSHITA DENKI SANGYO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To remove a short circuit between electrodes, and to facilitate fusing work by forming a groove around a section fusing a semiconductor laser element on a heat sink and making the area of the fusing section surrounded by the groove smaller than those of the electrodes for the semiconductor laser element. CONSTITUTION:A groove 12 with a V-shaped section in several dozen mum width and several dozen mum depth is formed on an silicon substrate 1 For shaping ohmic electrodes on the silicon substrate, Au, etc. are attached, and a fusion metal 9 such as Sn is stuck. A heat sink 10 obtained by cutting the silicon substrate 11 along broken lines A-A' is placed on a heater 14 and the fusion metal 9 is melted, and a semiconductor laser element 8 is placed on a section surroundded by the groove 12 so that a cleavage plane 15 thereof and the cut end surface 16 of the heat sink 10 are aligned in the same surface, held down lightly from an upper section and fused. The fusion metal does not creep around the side surface of the element by forming the groove, and an electrical short circuit between the positive and negative electrodes can be prevented completely. |
| 公开日期 | 1985-10-05 |
| 申请日期 | 1984-03-19 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/70560]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA DENKI SANGYO KK |
| 推荐引用方式 GB/T 7714 | TAJIRI FUMIKO,HAMADA TAKESHI,SHIMIZU YUUICHI,et al. Semiconductor laser device. JP1985196992A. 1985-10-05. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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