Semiconductor laser device
文献类型：专利
| 作者 | MIZUISHI KENICHI; CHIBA KATSUAKI; TOKUDA MASAHIDE |
| 发表日期 | 1985-10-24 |
| 专利号 | JP1985211992A |
| 著作权人 | HITACHI SEISAKUSHO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To obtain a highly reliable semiconductor laser device of which heat resistance is decreased, by a method wherein at least one of Si, BeO and SiC is included as a composed element of a lead line which is taken out from another electrode of a laser chip. CONSTITUTION:An N electrode of the laser chip 1 is soldered to a cupper made heat sink block 2 which is applied gold deposit interposing, for instance, an electrically conductive Si submount, and at a P electrode of a chip metal layer 5 which is metallizing formed on the surface of a beam 4 is electrically connected to an outer lead terminal 8 by soldering. On this assembly, a laser chip 1 is fused to an Si submount 3 by AuSn type solder 10 and subsequently the submount is fused to a block 2 by AuSn type solder 11 of which melting point is low than that of solder 10. Consequentively, an electric lead is taken out from a P electrode using the metal layer 5 which is formed continuously depositing, for instance, Ti, Pt, Au and BLH 4 having PbSn type solder layer 9, 9' which is partly metalizing formed. Hereby, heat resistance of elements are remarkably decreased, and improvements of element quality and reliability will be possible. |
| 公开日期 | 1985-10-24 |
| 申请日期 | 1984-04-06 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/70561]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI SEISAKUSHO KK |
| 推荐引用方式 GB/T 7714 | MIZUISHI KENICHI,CHIBA KATSUAKI,TOKUDA MASAHIDE. Semiconductor laser device. JP1985211992A. 1985-10-24. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。