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文献类型：专利
| 作者 | YAMAMOTO SABURO; MATSUI KANEKI; TANETANI MOTOTAKA; YANO MORICHIKA |
| 发表日期 | 1993-11-30 |
| 专利号 | JP1993084076B2 |
| 著作权人 | SHARP KK |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | - |
| 英文摘要 | PURPOSE:To provide a semiconductor laser device capable of high energy of the same phase by a method wherein a high-efficiency reflection film is formed at the end face of every other filament in a parallel lineup of a plurality of filaments. CONSTITUTION:A high-reflectivity film is formed at the end face 9 of every other filament by photolithography or the like. The end face 8 of each of the other filaments is provided with a low-reflectivity film wherethrough optical energy is taken out. Faces at the other ends of the filaments are also provided with reflection films as in the case of said end faces. With the device being designed as such, in the internal photoelectric field, there is a 90 deg. deviation in phase between neighboring filaments, which does not contradict the principle of optical coupling through polarization in a crystal. In view of the symmetry between the lefthand and righthand filaments as observed from a given filament, the light in every other filament is of the same phase. The optical energy emitted from the end faces 8 provided with low-reflectivity films is a phase-synchronized laser beam whose far-field pattern has a single, acute peak. |
| 公开日期 | 1993-11-30 |
| 申请日期 | 1984-04-10 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/70562]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KK |
| 推荐引用方式 GB/T 7714 | YAMAMOTO SABURO,MATSUI KANEKI,TANETANI MOTOTAKA,et al. -. JP1993084076B2. 1993-11-30. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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