Semiconductor laser device
文献类型：专利
| 作者 | KOBAYASHI MASAYOSHI; HIRAO MOTONAO; TAKEDA YUTAKA; YAMASHITA SHIGEO; AIKI KUNIO |
| 发表日期 | 1984-11-29 |
| 专利号 | JP1984210687A |
| 著作权人 | HITACHI SEISAKUSHO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To improve heat radiation efficiency on a mount for a laser element, and to remove strain generated on the mount by constituting a metallic thin-film on the surface of the mount by a Cr layer and an AuxSn1-x layer. CONSTITUTION:Metallic thin-films consisting of AuSn layers 2, 6 and Cr layers 3, 5 are formed on a package vessel 1 for a semiconductor laser device, and an Si sub-mount 4 as a heat sink is mounted among the metallic thin-films. A semiconductor laser element 7 is formed on the mount 4 with the heat sink, and a metallic electrode 8 is shaped in a predetermined region in the element 7 through bonding. Cr is evaporated on the mount 4 under vacuum to form a Cr layer 5, and Au and Sn are evaporated under vacuum as AuxSn1-x (0.08<=x<=0.2) to shape an AuSn layer 6. An electrode surface for the element 7 and the AuSn layer on the surface of the heat sink are alloyed at a fixed temperature, heat radiation efficiency on the mount 4 is improved, and strain generated on the mount 4 is removed. |
| 公开日期 | 1984-11-29 |
| 申请日期 | 1984-05-04 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/70565]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI SEISAKUSHO KK |
| 推荐引用方式 GB/T 7714 | KOBAYASHI MASAYOSHI,HIRAO MOTONAO,TAKEDA YUTAKA,et al. Semiconductor laser device. JP1984210687A. 1984-11-29. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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