中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Semiconductor laser device

文献类型:专利

作者TAMURA MITSUO; ISHIKAWA SEIJI; SONE KENROU
发表日期1985-11-22
专利号JP1985235490A
著作权人MATSUSHITA DENKI SANGYO KK
国家日本
文献子类发明申请
其他题名Semiconductor laser device
英文摘要PURPOSE:To improve an optical output, to adjust an optical axis easily and to enhance stability for a prolonged term by coupling laser beams from a first semiconductor laser and laser beams from a second semiconductor laser by a polarizing element and introducing the coupled laser beams to the same optical axis. CONSTITUTION:Laser beams F from a semiconductor laser 20 are changed into parallel beams by a convergent lens 22, and projected to a polarizing element 24. The direction H of polarized electromagnetic radiation of laser beams F and the direction I of polarized electromagnetic radiation of the polarizing element 24 run parallel, and laser beams F are hardly attenuated and pass through the polarizing element 24. Laser beams G from a semiconductor laser 21 are turned into parallel beams by a convergent lens 23, and projected to the polarizing element 24. The direction J of polarized electromagnetic radiation of laser beams G and the direction I of polarized electromagnetic radiation of the polarizing element 24 cross at right angles, and laser beams G are totally reflected approximately by the polarizing element 24. Reliability is not deteriorated as they are in optical outputs from each semiconductor laser 20, 21, an optical output at twice as much as optical outputs from the lasers 20, 21 is given, and laser beams K, optical axes thereof are aligned, are obtained.
公开日期1985-11-22
申请日期1984-05-08
状态失效
源URL[http://ir.opt.ac.cn/handle/181661/70566]  
专题半导体激光器专利数据库
作者单位MATSUSHITA DENKI SANGYO KK
推荐引用方式
GB/T 7714
TAMURA MITSUO,ISHIKAWA SEIJI,SONE KENROU. Semiconductor laser device. JP1985235490A. 1985-11-22.

入库方式: OAI收割

来源:西安光学精密机械研究所

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