Semiconductor laser device
文献类型：专利
| 作者 | AOKI SATOSHI; YOSHIYA TSUTOMU |
| 发表日期 | 1986-04-12 |
| 专利号 | JP1986071689A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To enable the temperature of a semiconductor laser to be kept constant even when the ambient temperature varies largely, by a method wherein the current and polarity supplied to an electronic cooling element are controlled by the output of a temperature detection element led out of a hermetic sealed terminal. CONSTITUTION:A semiconductor laser 1 is mounted on a stem 2 made of a substance of high thermal conductivity, together with a thermistor 3 which is a kind of temperature detection element, and the stem 2 is fixed in low terminal resistance on a Peltier effect element 6 which has been fixed to a stem 5 in low thermal resistance. A cap 8 having a hermetic window 7 through which the radiated light of the semiconductor laser 1 is led out is welded to the stem 5, and the container is sealed in the state of dry nitrogen atmosphere. In this device, the variation in resistance value caused by temperature changes is grasped as the variation in voltage by impressing constant current on the thermistor 3, and the polarity of the current supplied to the Peltier effect element 6 is inverted so that this variation may reduce to zero, i.e. temperature may become constant; thereby, the temperature of the semiconductor laser 1 is controlled constant. |
| 公开日期 | 1986-04-12 |
| 申请日期 | 1984-09-17 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/70586]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | AOKI SATOSHI,YOSHIYA TSUTOMU. Semiconductor laser device. JP1986071689A. 1986-04-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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