Semiconductor laser
文献类型：专利
| 作者 | ITO TATSUYA; HASHIMOTO HIROKAZU |
| 发表日期 | 1986-04-21 |
| 专利号 | JP1986078187A |
| 著作权人 | FUJIKURA LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To improve wire bonding properties, and to enhance yield and reliability by die-bonding a metallic thick film on the upper surface of a semiconductor laser element with a heat sink and wire-bonding a lead wire with a metallic thick film on a lower surface. CONSTITUTION:Photo-resist layers 4 and 4a according to the same pattern in the upper and lower surfaces of a laser element 3 are each formed onto the upper and lower surface so that the positions of the upper and lower surfaces are conformed by using a device such as a double-side mask aligner. Metallic thick films 5 consisting of gold, silver, tin or the like and 5a composed of the same metal are shaped severally onto the upper and lower surfaces of the laser element 3 through selective plating, the photo-resist layers 4 and 4a are removed, and the whole is changed into chips. The upper and lower sections of the laser element 3 are turned upside down and the metallic thick film 5 is die-bonded onto a heat sink 6, and one tip of a gold wire 7 is wire- bonded with the upper surface of the metallic thick film 5a and the other tip of the gold wire 7 with a lead terminal 8 respectively. |
| 公开日期 | 1986-04-21 |
| 申请日期 | 1984-09-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/70588]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJIKURA LTD |
| 推荐引用方式 GB/T 7714 | ITO TATSUYA,HASHIMOTO HIROKAZU. Semiconductor laser. JP1986078187A. 1986-04-21. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。