Manufacture of semiconductor laser
文献类型：专利
| 作者 | MITA ARIO |
| 发表日期 | 1986-05-06 |
| 专利号 | JP1986088588A |
| 著作权人 | SONY CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To bond semiconductor laser chips simultaneously with a large number of light-receiving elements by bonding the semiconductor laser chips to laser chip connecting sections in each element forming region to a wafer-shaped semiconductor substrate. CONSTITUTION:Photodiodes 3 are formed in several element forming region 2 in a semiconductor substrate 1, and solder layers 4 are shaped to laser chip connecting sections in each region 2. Grooves 9 are shaped along substrate- latticed half dicing lines 8 from the surface in the substrate Semiconductor laser chips 10 are positioned onto the layers 4 in respective region 2, and the chips 10 are bonded with the laser chip connecting sections in the substrate 1 through the layers 4 through heating. The substrate 1 is broken by the groove 9 and divided into several pellet 1 According to said manufacture, the semiconductor laser chips can be bonded with a large number of light-receiving elements shaped to one wafer at the same time. Consequently, the chips can be bonded extremely simply. |
| 公开日期 | 1986-05-06 |
| 申请日期 | 1984-10-08 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/70591]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SONY CORP |
| 推荐引用方式 GB/T 7714 | MITA ARIO. Manufacture of semiconductor laser. JP1986088588A. 1986-05-06. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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