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文献类型：专利
| 作者 | MYAUCHI NOBUYUKI; MAEI SHIGEKI; YAMAMOTO OSAMU; MORIMOTO TAIJI; HAYASHI HIROSHI; YAMAMOTO SABURO |
| 发表日期 | 1989-03-14 |
| 专利号 | JP1989014717B2 |
| 著作权人 | SHARP KK |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | - |
| 英文摘要 | PURPOSE:To enable long time stable high output laser oscillation by setting the mesa width of an exciting region to the injecting width or longer of a current implanting path formed in a strip groove, thereby improving the contribution rate of the implanting current to the laser oscillation. CONSTITUTION:A current for a laser oscillation is blocked by an N type GaAs current blocking layer 32, and the current is implanted only from the implanting portion (current path) of width Wi1, Wi2 at the center and the end of a resonator. The current implanted to the active layer 34 through the mesa having the width Wi1 of the channel groove is formed of a mesa structure having a width Wi1 coupled directly with the mesa in the channel groove or slight wider width than the width Wi1 is the laser operating multilayer crystal, and a high resistance buried layer 36 is contacted directly with the current path of the channel groove. Thus, the leakage current is eliminated to supply to the exciting region of the layer 34. |
| 公开日期 | 1989-03-14 |
| 申请日期 | 1984-10-16 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/70592]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KK |
| 推荐引用方式 GB/T 7714 | MYAUCHI NOBUYUKI,MAEI SHIGEKI,YAMAMOTO OSAMU,et al. -. JP1989014717B2. 1989-03-14. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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